Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
Identifieur interne : 000B73 ( Main/Repository ); précédent : 000B72; suivant : 000B74Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
Auteurs : RBID : Pascal:13-0210440Descripteurs français
- Pascal (Inist)
- Matériau dopé, Couche ITO, Addition étain, Rendement élevé, Cellule solaire silicium, Hétérojonction, Perte optique, Echange commercial, Porteur libre, Résistivité couche, Mobilité électron, Etude comparative, Résistance contact, Interface entrée sortie, Evaluation performance, Cellule solaire, Sérigraphie, Hydrogène, Oxyde d'indium, Bicouche, Matériau conducteur, Matériau transparent, Argent, Silicium, Marché électricité, Economie réseau électrique, ITO.
- Wicri :
English descriptors
- KwdEn :
- Bilayers, Comparative study, Conducting material, Contact resistance, Doped materials, Electron mobility, Free carrier, Heterojunction, High efficiency, Hydrogen, ITO layers, Indium oxide, Input output interface, Optical losses, Performance evaluation, Power markets, Power system economics, Serigraphy, Sheet resistivity, Silicon, Silicon solar cells, Silver, Solar cell, Tin addition, Trade, Transparent material.
Abstract
The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm2/V s, reduces these losses compared to traditional, low-mobility transparent conductive oxides, but suffers from high contact resistance at the interface of the IO:H layer and the silver front electrode grid. This problem is avoided by inserting a thin indium tin oxide (ITO) layer at the IO:H/silver interface. Such IO:H/ITO bilayers have low contact resistance, sheet resistance, and free-carrier absorption, and outperform IO:H-only or ITO-only layers in solar cells. We report a certified efficiency of 22.1% for a 4-cm2 screen-printed silicon heterojunction solar cell employing an IO:H/ITO bilayer as the front transparent conductive oxide.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells</title><author><name sortKey="Barraud, L" uniqKey="Barraud L">L. Barraud</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author><author><name sortKey="Holman, Z C" uniqKey="Holman Z">Z. C. Holman</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author><author><name sortKey="Badel, N" uniqKey="Badel N">N. Badel</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author><author><name sortKey="Reiss, P" uniqKey="Reiss P">P. Reiss</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author><author><name sortKey="Descoeudres, A" uniqKey="Descoeudres A">A. Descoeudres</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author><author><name sortKey="Battaglia, C" uniqKey="Battaglia C">C. Battaglia</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author><author><name sortKey="De Wolf, S" uniqKey="De Wolf S">S. De Wolf</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author><author><name sortKey="Ballif, C" uniqKey="Ballif C">C. Ballif</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>Suisse</country><wicri:noRegion>2000 Neuchâtel</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">13-0210440</idno><date when="2013">2013</date><idno type="stanalyst">PASCAL 13-0210440 INIST</idno><idno type="RBID">Pascal:13-0210440</idno><idno type="wicri:Area/Main/Corpus">000C13</idno><idno type="wicri:Area/Main/Repository">000B73</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Bilayers</term><term>Comparative study</term><term>Conducting material</term><term>Contact resistance</term><term>Doped materials</term><term>Electron mobility</term><term>Free carrier</term><term>Heterojunction</term><term>High efficiency</term><term>Hydrogen</term><term>ITO layers</term><term>Indium oxide</term><term>Input output interface</term><term>Optical losses</term><term>Performance evaluation</term><term>Power markets</term><term>Power system economics</term><term>Serigraphy</term><term>Sheet resistivity</term><term>Silicon</term><term>Silicon solar cells</term><term>Silver</term><term>Solar cell</term><term>Tin addition</term><term>Trade</term><term>Transparent material</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Matériau dopé</term><term>Couche ITO</term><term>Addition étain</term><term>Rendement élevé</term><term>Cellule solaire silicium</term><term>Hétérojonction</term><term>Perte optique</term><term>Echange commercial</term><term>Porteur libre</term><term>Résistivité couche</term><term>Mobilité électron</term><term>Etude comparative</term><term>Résistance contact</term><term>Interface entrée sortie</term><term>Evaluation performance</term><term>Cellule solaire</term><term>Sérigraphie</term><term>Hydrogène</term><term>Oxyde d'indium</term><term>Bicouche</term><term>Matériau conducteur</term><term>Matériau transparent</term><term>Argent</term><term>Silicium</term><term>Marché électricité</term><term>Economie réseau électrique</term><term>ITO</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Hydrogène</term><term>Argent</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm<sup>2</sup>/V s, reduces these losses compared to traditional, low-mobility transparent conductive oxides, but suffers from high contact resistance at the interface of the IO:H layer and the silver front electrode grid. This problem is avoided by inserting a thin indium tin oxide (ITO) layer at the IO:H/silver interface. Such IO:H/ITO bilayers have low contact resistance, sheet resistance, and free-carrier absorption, and outperform IO:H-only or ITO-only layers in solar cells. We report a certified efficiency of 22.1% for a 4-cm<sup>2</sup> screen-printed silicon heterojunction solar cell employing an IO:H/ITO bilayer as the front transparent conductive oxide.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>115</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells</s1></fA08><fA11 i1="01" i2="1"><s1>BARRAUD (L.)</s1></fA11><fA11 i1="02" i2="1"><s1>HOLMAN (Z. C.)</s1></fA11><fA11 i1="03" i2="1"><s1>BADEL (N.)</s1></fA11><fA11 i1="04" i2="1"><s1>REISS (P.)</s1></fA11><fA11 i1="05" i2="1"><s1>DESCOEUDRES (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>BATTAGLIA (C.)</s1></fA11><fA11 i1="07" i2="1"><s1>DE WOLF (S.)</s1></fA11><fA11 i1="08" i2="1"><s1>BALLIF (C.)</s1></fA11><fA14 i1="01"><s1>Ecole Polytechnique Fédérale de Lausanne (EPFL), Institute of Microengineering (IMT), Photovoltaics and Thin-Film Electronics Laboratory, Rue A.-L. Breguet 2</s1><s2>2000 Neuchâtel</s2><s3>CHE</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA20><s1>151-156</s1></fA20><fA21><s1>2013</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000503803110220</s5></fA43><fA44><s0>0000</s0><s1>© 2013 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>26 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>13-0210440</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>The front transparent conductive oxide layer is a source of significant optical and electrical losses in silicon heterojunction solar cells because of the trade-off between free-carrier absorption and sheet resistance. We demonstrate that hydrogen-doped indium oxide (IO:H), which has an electron mobility of over 100 cm<sup>2</sup>/V s, reduces these losses compared to traditional, low-mobility transparent conductive oxides, but suffers from high contact resistance at the interface of the IO:H layer and the silver front electrode grid. This problem is avoided by inserting a thin indium tin oxide (ITO) layer at the IO:H/silver interface. Such IO:H/ITO bilayers have low contact resistance, sheet resistance, and free-carrier absorption, and outperform IO:H-only or ITO-only layers in solar cells. We report a certified efficiency of 22.1% for a 4-cm<sup>2</sup> screen-printed silicon heterojunction solar cell employing an IO:H/ITO bilayer as the front transparent conductive oxide.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>001D05I03D</s0></fC02><fC02 i1="03" i2="X"><s0>001D05I01H</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Matériau dopé</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Doped materials</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche ITO</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>ITO layers</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Addition étain</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Tin addition</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Adición estaño</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Rendement élevé</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>High 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